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GWM160-0055X1-SL

Description
Power Field-Effect Transistor, 150A I(D), 55V, 0.0033ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size320KB,6 Pages
ManufacturerIXYS
Environmental Compliance
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GWM160-0055X1-SL Overview

Power Field-Effect Transistor, 150A I(D), 55V, 0.0033ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

GWM160-0055X1-SL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIXYS
package instructionFLATPACK, R-PDFP-F17
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)150 A
Maximum drain current (ID)150 A
Maximum drain-source on-resistance0.0033 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDFP-F17
Number of components6
Number of terminals17
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
GWM 160-0055X1
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
G1
S1
G3
S3
G5
S5
L1
L2
L3
G4
S4
G6
S6
L-
V
DSS
= 55 V
= 150 A
I
D25
R
DSon typ.
= 2.7 mW
Straight leads
Surface Mount Device
G2
S2
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
Symbol
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C (diode)
T
C
= 90°C (diode)
Conditions
Conditions
T
J
= 25°C to 150°C
Maximum Ratings
55
±
20
150
115
120
75
V
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
-o
e
min.
2.5
0.1
0.2
105
tbd
tbd
140
125
550
120
0.17
0.60
0.004
1.3
1.0
1.6
Characteristic Values
typ.
2.7
4.5
max.
3.3
4.5
1
mW
mW
V
µA
mA
µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
(T
J
= 25°C, unless otherwise specified)
R
DSon 1)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
recoff
R
thJC
R
thJH
1)
V
DS
= 20 V; I
D
= 1 mA
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 12 V; I
D
= 160 A
inductive load
V
GS
= 10 V; V
DS
= 24 V
I
D
= 100 A; R
G
= 39
Ω;
T
J
= 125°C
with heat transfer paste (IXYS test setup)
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
Recommended replacements: MTI 120W55GA / MTI 120W55GC
IXYS reserves the right to change limits, test conditions and dimensions.
20110307i
p
h
a
T
J
= 25°C
T
J
= 125°C
on chip level at
V
GS
= 10 V; I
D
= 100 A
T
J
= 25°C
T
J
= 125°C
s
u
A
A
A
A
t
V
© 2011 IXYS All rights reserved
1-6

GWM160-0055X1-SL Related Products

GWM160-0055X1-SL GWM160-0055X1-SMD
Description Power Field-Effect Transistor, 150A I(D), 55V, 0.0033ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 150A I(D), 55V, 0.0033ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 17 PIN
Is it Rohs certified? conform to conform to
Maker IXYS IXYS
package instruction FLATPACK, R-PDFP-F17 SMALL OUTLINE, R-PDSO-G17
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (Abs) (ID) 150 A 150 A
Maximum drain current (ID) 150 A 150 A
Maximum drain-source on-resistance 0.0033 Ω 0.0033 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDFP-F17 R-PDSO-G17
Number of components 6 6
Number of terminals 17 17
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLATPACK SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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