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2N6517

Description
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size423KB,6 Pages
ManufacturerMicro Commercial Components (MCC)
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2N6517 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, PACKAGE-3

2N6517 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Maximum off time (toff)3500 ns
Maximum opening time (tons)200 ns
MCC
Features
  omponents
21201 Itasca Street Chatsworth

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NPN
2N6515, 2N6517
PNP
2N6519, 2N6520
High Voltage
Transistor
625mW
l
Through Hole Package
l
150
o
C Junction Temperature
l
Voltage and Current are negative for PNP transistors
Pin Configuration
Bottom View
C
B
E
TO-92
Mechanical Data
l
Case: TO-92, Molded Plastic
l
Polarity: indicated as above.
A
E
B
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
2N6515
2N6519
2N6517, 2N6520
Collector-Base Voltage
2N6515
2N6519
2N6517, 2N6520
Emitter-Base Voltage
2N6515-6517
2N6519-6520
Base Current
Collector Current(DC)
Power Dissipation@TA=25 C
Power Dissipation@TC=25
o
C
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to Case
Operating & Storage Temperature
o
Symbol
V
CEO
Value
250
300
350
250
300
350
6.0
5.0
250
500
625
5.0
1.5
12
200
83.3
-55~150
Unit
V
C
Collector-Emitter Voltage
V
CBO
V
D
V
EBO
I
B
I
C
P
d
P
d
R
qJA
R
qJC
V
mA
mA
W
o
mW/ C
W
o
mW/ C
o
o
G
DIMENSIONS
C/W
C/W
o
T
j
, T
STG
C
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
MAX
.185
.185
---
.020
.145
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
www.mccsemi.com

2N6517 Related Products

2N6517 2N6520 2N6519
Description Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC, PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC) Micro Commercial Components (MCC)
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 PLASTIC, PACKAGE-3 PLASTIC, PACKAGE-3
Contacts 3 3 3
Reach Compliance Code unknow unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 350 V 350 V 300 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 20
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN PNP PNP
Maximum power dissipation(Abs) 625 W 625 W 625 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 40 MHz 40 MHz 40 MHz
Maximum off time (toff) 3500 ns 3500 ns 3500 ns
Maximum opening time (tons) 200 ns 200 ns 200 ns
Humidity sensitivity level 1 1 -
Base Number Matches - 1 1
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