BAW56 datasheet, PDF - EEWORLD Datasheet

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BAW56: DescriptionRectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor diode; File Size78KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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BAW56 Overview

Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-3

BAW56 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micro Commercial Components (MCC)
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.855 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Maximum non-repetitive peak forward current	1 A
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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MCC

Features

•

omponents

21201 Itasca Street Chatsworth

!"#

$ % !"#

BAW56

Low Current Leakage

Low Cost

Small Outline Surface Mount Package

A

Pin Configuration

Top View

350mW 75Volt

Dual Switching Diode

A1

C

A

D

SOT-23

•

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 357K/W Junction To Ambient

F

E

C

B

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

Average Rectified

Output Current

Power Dissipation

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

Reverse Recovery

Time

V

R

I

O

P

TOT

I

FSM

75V

150mA

350mW

1.0A

G

H

J

DIMENSIONS

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MM

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

t=1s,Non-Repetitive

V

F

855mV

I

R

2.5µA

50µA

2pF

I

FM

= 10mA;

T

J

= 25°C*

V

R

=75Volts

T

J

= 25°C

T

J

= 150°C

DIM

A

B

C

D

E

F

G

H

J

K

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

mm

Measured at

1.0MHz, V

R

=0V

T

rr

4nS

I

F

=10mA

V

R

= 0V

R

L

=500Ω

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

C

J

.037

.950

.037

.950

www.mccsemi.com

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