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BD237

Description
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size128KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
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BD237 Overview

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BD237 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BD233
BD235
BD237
NPN
Plastic-Encapsulate
Transistors

Features
Power Dissipation: P
CM
=1.25W, Ta=25℃
Collector Current : I
C
=2A
Complement to BD234/236/238 respectively
Maximum Ratings*
Symbol
V
CEO
Collector-Base Voltage
V
CBO
Collector-Emitter Voltage
V
CER
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Symbol
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation ( T
C
=25℃)
Operating Junction Temperature
Storage Temperature
Rating
Collector-Emitter Voltage
BD233
BD235
BD237
BD233
BD235
BD237
BD233
BD235
BD237
Rating
45
60
80
45
60
100
45
60
100
5
2
6
25
150
-65 to +150
Unit
V
D
A
K
V
R
E
B
V
V
A
A
W
Units
F
G
L
H
C
M
N
P
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Parameter
Min
Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
BD233 (I
C
=0.1Adc, I
B
=0)
V
CEO(sus)
BD235 (I
C
=0.1Adc, I
B
=0)
BD237 (I
C
=0.1Adc, I
B
=0)
Collector Cutoff Current
BD233 (V
CB
=45Vdc, I
E
=0)
I
CBO
BD235 (V
CB
=60Vdc, I
E
=0)
BD237 (V
CB
=100Vdc, I
E
=0)
Emitter Cutoff Current
I
EBO
(V
BE
=5.0Vdc, I
C
=0)
DC Current Gain
h
FE
(V
CE
=2V, I
C
=150mA)
(V
CE
=2V, I
C
=1A)
Collector-Emitter Saturation Voltage
V
CE(sat)
(I
C
=1A, I
B
=0.1A)
Base-Emitter ON Voltage
V
BE(on)
(V
CE
=2V, I
C
=1A)
Current Gain Bandwidth Product
fT
(V
CE
=10V, I
C
=0.25A)
*Pulse Test: PW=300µs, Duty Cycle=1.5% Pulsed
45
60
80
---
---
---
---
40
25
---
---
3
---
---
---
100
100
100
1.0
---
---
0.6
1.3
---
V
V
MHz
V
V
V
µA
µA
µA
mA
















!
 
















1
2
J
3
J
Q
EMITTER
COLLECTOR
BASE
PIN 1.
PIN 2.
PIN 3.


























































 

www.mccsemi.com
Revision: 1
2004/05/17

BD237 Related Products

BD237 405C11EM BD233
Description Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Surface Mount Quartz Crystal Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Is it Rohs certified? incompatible - incompatible
Maker Micro Commercial Components (MCC) - Micro Commercial Components (MCC)
Parts packaging code SIP - SIP
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
Contacts 3 - 3
Reach Compliance Code compli - compliant
ECCN code EAR99 - EAR99
Maximum collector current (IC) 2 A - 2 A
Collector-emitter maximum voltage 80 V - 45 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 25 - 25
JEDEC-95 code TO-126 - TO-126
JESD-30 code R-PSFM-T3 - R-PSFM-T3
JESD-609 code e0 - e0
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type NPN - NPN
Certification status Not Qualified - Not Qualified
surface mount NO - NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 3 MHz - 3 MHz
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