74HC2G16; 74HCT2G16
Dual buffer gate
Rev. 1 — 2 November 2015
Product data sheet
1. General description
The 74HC2G16; 74HCT2G16 is a high-speed Si-gate CMOS device.
The 74HC2G16; 74HCT2G16 provides two buffers.
2. Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V
Complies with JEDEC standard no. 7A
High noise immunity
ESD protection:
HBM JESD22-A114-D exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Low power dissipation
Balanced propagation delays
Unlimited input rise and fall times
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC2G16GW
74HC2G16GV
74HCT2G16GW
74HCT2G16GV
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
Name
SC-88
SC-74
SC-88
SC-74
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT363
SOT457
SOT363
SOT457
Type number
4. Marking
Table 2.
Marking
Marking code
P6
P6
U6
U6
Type number
74HC2G16GW
74HC2G16GV
74HCT2G16GW
74HCT2G16GV
NXP Semiconductors
74HC2G16; 74HCT2G16
Dual buffer gate
5. Functional diagram
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram (one gate)
6. Pinning information
6.1 Pinning
Fig 4. Pin configuration
6.2 Pin description
Table 3.
Symbol
1A
GND
2A
2Y
V
CC
1Y
Pin description
Pin
1
2
3
4
5
6
Description
data input
ground (0 V)
data input
data output
supply voltage
data output
74HC_HCT2G16
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 2 November 2015
2 of 15
NXP Semiconductors
74HC2G16; 74HCT2G16
Dual buffer gate
7. Functional description
Table 4.
Input
nA
L
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
Function table
[1]
Output
nY
L
H
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
0.5
V to V
CC
+ 0.5 V
[1]
[1]
[1]
[1]
[1]
Min
0.5
-
-
-
-
-
65
[2]
Max
+7.0
20
20
25
+50
50
250
Unit
V
mA
mA
mA
mA
mA
mW
+150
C
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SC-88 and SC-74 packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t
r
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
rise time
except for Schmitt trigger inputs
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
f
fall time
except for Schmitt trigger inputs
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
74HC_HCT2G16
All information provided in this document is subject to legal disclaimers.
Conditions
Min
2.0
0
0
40
-
-
-
-
-
-
Typ
5.0
-
-
+25
-
-
-
-
-
-
Max
6.0
V
CC
V
CC
+125
1000
500
400
1000
500
400
Unit
V
V
V
C
ns
ns
ns
ns
ns
ns
Type 74HC2G16
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 2 November 2015
3 of 15
NXP Semiconductors
74HC2G16; 74HCT2G16
Dual buffer gate
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t
r
t
f
Recommended operating conditions
…continued
Parameter
supply voltage
input voltage
output voltage
ambient temperature
rise time
fall time
except for Schmitt trigger inputs
V
CC
= 4.5 V
except for Schmitt trigger inputs
V
CC
= 4.5 V
-
-
500
ns
-
-
500
ns
Conditions
Min
4.5
0
0
40
Typ
5.0
-
-
+25
Max
5.5
V
CC
V
CC
+125
Unit
V
V
V
C
Type 74HCT2G16
10. Static characteristics
Table 7.
Static characteristics for 74HC2G16
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
T
amb
= 25
C
V
IH
HIGH-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
4.0
mA; V
CC
= 4.5 V
I
O
=
5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage current
supply current
input capacitance
V
I
= GND or V
CC
; V
CC
= 6.0 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 6.0 V
-
1.5
-
pF
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
0.1
0.1
0.1
0.26
0.26
0.1
1.0
V
V
V
V
V
A
A
1.9
4.4
5.9
4.18
5.68
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Parameter
Conditions
Min
Typ
Max
Unit
74HC_HCT2G16
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 2 November 2015
4 of 15
NXP Semiconductors
74HC2G16; 74HCT2G16
Dual buffer gate
Table 7.
Static characteristics for 74HC2G16
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
V
IH
Parameter
HIGH-level input voltage
Conditions
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
4.0
mA; V
CC
= 4.5 V
I
O
=
5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
input leakage current
supply current
V
I
= GND or V
CC
; V
CC
= 6.0 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 6.0 V
T
amb
=
40 C
to +125
C
V
IH
HIGH-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
4.0
mA; V
CC
= 4.5 V
I
O
=
5.2
mA; V
CC
= 6.0 V
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
-
-
-
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1.0
10.0
V
V
V
V
V
A
A
1.9
4.4
5.9
4.13
5.63
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
Min
1.5
3.15
4.2
-
-
-
Typ
-
-
-
-
-
-
Max
-
-
-
0.5
1.35
1.8
Unit
V
V
V
V
V
V
T
amb
=
40 C
to +85
C
74HC_HCT2G16
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 2 November 2015
5 of 15
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