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3KASMC10

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size412KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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3KASMC10 Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

New Product
3KASMC10A thru 3KASMC43A
www.vishay.com
Vishay General Semiconductor
Surface Mount
PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
Junction passivation optimized design
passivated anisotropic rectifier technology
• T
J
= 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
• 3000 W peak pulse power capability with a 10/1000 μs
waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AB (SMC)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
V
WM
V
BR
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
10 V to 43 V
11.1 V to 52.8 V
3000 W
6.0 W
200 A
185 °C
Uni-directional
DO-214AB (SMC)
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 3)
Peak power pulse current with a 10/1000 μs waveform
(1)
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Power dissipation
on infinite heatsink, T
L
= 75 °C
(fig. 6)
Maximum instantaneous forward voltage at 100 A
(2)
Operating junction and storage temperature range
SYMBOL
P
PPM
I
PPM
I
FSM
P
D
V
F
T
J
, T
STG
VALUE
3000
See next table
200
6.0
3.5
- 65 to + 185
UNIT
W
A
A
W
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
Revision: 05-Mar-13
Document Number: 89962
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

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