3QL150AK Thru 3QL150AS
1.
外型尺寸Feature
& Dimension
Features
l
Package with screw terminals
l
Isolation voltage 3000 V~
l
Glass passivated chips
l
Blocking voltage up to 1600 V
l
Low forward voltage drop
l
UL registered E231047
Applications
l
Supplies for DC power equipment
l
Input rectifiers for PWM inverter
l
Battery DC power supplies
l
Field supply for DC motors
Advantages
l
Easy to mount with two screws
l
Space and weight savings
l
Improved temperature and power cycling
2.
产品性½Product
Characteristic
ELECTRICAL AND THERMAL CHARACTERISTICS
Item
Maximum repetitive voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Reverse Current (per leg) @Tj = 25°C
At Rated DC Blocking Voltage @Tj = 150°C
Average recified forward current 60Hz sine
wave,R-load with heatsink Tc=100℃
TJ=45℃VR=0
TJ=150℃ VR=0
t=10ms (50Hz),sine
t=8.3ms(60Hz),sine
t=10ms (50Hz),sine
t=8.3ms(60Hz),sine
TJ=45℃VR=0
TJ=150℃ VR=0
t=10ms (50Hz),sine
t=8.3ms(60Hz),sine
t=10ms (50Hz),sine
t=8.3ms(60Hz),sine
I
2
t
I
FSM
Symbol
VRM
VRMS
VDC
IR
3QL150AK
800
560
800
1200
840
1200
≤10
≤20
150
1500
1700
1350
1500
11250
14450
9100
11250
2
A
2
s
A
TC=25°C unless otherwise specified
3QL150AO
3QL150AQ
1400
980
1400
3QL150AS
1600
1120
1600
Unit
V
V
V
uA
mA
A
Io
3QL150AK Thru 3QL150AS
Storage temperature
50/60Hz RMS t=1 min
IISOL≤1mA t=1 s
Mounting torque(M5)
Terminal connection torque(M5)
typical
I
F
=200A T
J
=25℃
For power-loss calculations only
per diode DC current
Per module
per diode DC current(typ.)
per module(typ.)
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
Tstg
VISOL
Md
Weight
V
F
V
T0
R
thJC
R
thCS
dS
dA
a
-40 to +150
2500
3000
℃
V~
N·m
g
V
V
k/w
k/w
k/w
k/w
mm
mm
m/s
2
（Recommended
Value 1.5~2.5）5±15%
270
1.3
0.8
0.6
0.1
0.18
0.03
10
9.4
50
3
3QL150AK Thru 3QL150AS
3.
特性曲线Characteristic
Curve
Fig.1.Power dissipa o v o put c rent F
n s. ut
ur
i g 2 P r d ssi p on vs. Pwer D si pa on
. . owe i
a
o
is
Fig.3.Surge overload characteris c v m
s s. e
Fig.4.Forward characteris cs o a d o a m
f i de r
Fig.5.Transient thermal impedance vs. m
e
4
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