Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | CDIL[Continental Device India Pvt. Ltd.] |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 1 A |
| Collector-based maximum capacity | 25 pF |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-39 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.8 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 50 MHz |
| Maximum off time (toff) | 850 ns |
| VCEsat-Max | 1 V |
| BC141 | BC141-16 | BC141-6 | BC141-10 | |
|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | compli | compli | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A |
| Collector-based maximum capacity | 25 pF | 25 pF | 25 pF | 25 pF |
| Collector-emitter maximum voltage | 60 V | 60 V | 60 V | 60 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 40 | 100 | 40 | 63 |
| JEDEC-95 code | TO-39 | TO-39 | TO-39 | TO-39 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 175 °C | 175 °C | 175 °C |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.8 W | 0.75 W | 0.75 W | 0.75 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 50 MHz | 50 MHz | 50 MHz | 50 MHz |
| Maximum off time (toff) | 850 ns | 850 ns | 850 ns | 850 ns |
| VCEsat-Max | 1 V | 1 V | 1 V | 1 V |
| Maker | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | - | CDIL[Continental Device India Pvt. Ltd.] |
| package instruction | - | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
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