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BD536

Description
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size24KB,3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
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BD536 Overview

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BD536 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
BD533, BD535, BD537
BD534, BD536, BD538
BD533, 535, 537
BD534, 536, 538
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
Medium Power Linear and Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
3
B
H
F
C
E
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
M IN.
14.42
9.63
3.56
M A X.
N
L
O
1 2 3
D
G
J
M
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DE G 7
A
O
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector and emitter current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 2 A; I
B
= 0.2 A
D.C. current gain
I
C
= 10 mA; V
CE
= 5 V
V
CBO
V
CEO
I
C
, I
E
P
tot
T
j
V
CEsat
h
FE
All dim insions in m m .
K
533
534
max. 45
max. 45
max.
max.
max.
max.
min.
20
533
534
max.
max.
max.
max.
max.
45
45
45
535
536
60
60
8.0
50
150
0.8
20
535
536
60
60
60
5.0
8.0
537
538
80
80
V
V
A
W
°C
V
15
537
538
80
80
80
V
V
V
V
A
RATINGS
(at T
A
=25°C unless otherwise specified)
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector-emitter voltage (V
BE
= 0)
Emitter-base voltage (open collector)
Collector and emitter current
V
CBO
V
CEO
VCES
V
EBO
I
C
, I
E
Continental Device India Limited
Data Sheet
Page 1 of 3

BD536 Related Products

BD536 BD534 BD533J BD538
Description Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? conform to conform to conform to conform to
Parts packaging code SFM SFM SFM SFM
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3
Reach Compliance Code compli compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 8 A 8 A 8 A 8 A
Collector-emitter maximum voltage 60 V 45 V 45 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 15 15
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 140 °C 150 °C 150 °C 140 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP NPN PNP
Maximum power dissipation(Abs) 50 W 50 W 50 W 50 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz 3 MHz 3 MHz
Maker CDIL[Continental Device India Pvt. Ltd.] - CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]
transistor applications SWITCHING SWITCHING - SWITCHING

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