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BD136

Description
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size70KB,2 Pages
ManufacturerCentral Semiconductor
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BD136 Overview

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

BD136 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment1.25 W
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
VCEsat-Max0.5 V
DATA SHEET
BD136
BD138
BD140
PNP SILICON TRANSISTORS
JEDEC TO-126 CASE
DESCRIPTION:
The Central Semiconductor BD136, BD138, and BD140 types are PNP Silicon Epitaxial
Planar Transistors designed for audio amplifier and switching applications.
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation (Tmb
≤70°C)
Power Dissipation (TA=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
PD
TJ,Tstg
Θ
J-mb
Θ
JA
BD136
45
45
BD138
60
60
5.0
1.5
2.0
0.5
1.0
8.0
1.25
-65 to +150
10
100
BD140
100
80
UNIT
V
V
V
A
A
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
BD136
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=30V
100
ICBO
VCB=30V, TC=125°C
10
IEBO
VEB=5.0V
100
BVCEO
IC=30mA
45
VCE(SAT)
IC=500mA, IB=50mA
0.5
VBE(ON)
VCE=2.0V, IC=500mA
1.0
hFE
VCE=2.0V, IC=5.0mA
40
hFE
VCE=2.0V, IC=150mA
63
250
hFE
VCE=2.0V, IC=500mA
25
fT
VCE=5.0V, IC=50mA, f=100MHz
160 TYP
BD138
MIN MAX
100
10
100
60
0.5
1.0
40
63
250
25
160 TYP
BD140
MIN MAX
100
10
100
80
0.5
1.0
40
63
250
25
160 TYP
BD136-16
BD138-16
BD140-16
MIN MAX
100
250
UNIT
nA
µA
nA
V
V
V
MHz
SYMBOL
hFE
TEST CONDITIONS
VCE=2.0V, IC=150mA
(SEE REVERSE SIDE)
BD136-10
BD138-10
BD140-10
MIN MAX
63
160
R2

BD136 Related Products

BD136 BD138
Description Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Central Semiconductor Central Semiconductor
Parts packaging code SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 TO-126, 3 PIN
Contacts 3 3
Reach Compliance Code _compli not_compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 1.5 A 1.5 A
Collector-emitter maximum voltage 45 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 25
JEDEC-95 code TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 8 W 8 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 160 MHz 160 MHz
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