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SL32B

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size205KB,3 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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SL32B Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

SL32B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
package instructionSMB, 2 PIN
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.42 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage20 V
Maximum reverse current200 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

SL32B Preview

 
SL32B thru SL310B
 
Surface Mount Schottky Barrier Rectifier
 
FEATURES
 
Ideal for automated placement
Low forward voltage drop
Low leakage current
Meets environmental standard MIL-S-19500D
Moisture sensitivity:level 1, per J-STD-020
DO‐214AA(SMB)
Solder dip 275 °C, 10 s
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of lighting, power supplies, inverters, converters and
freewheeling diodes for consumer, automotive and telecommunication.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
3A
20 V to 100 V
80A
0.42V,0.5V,0.75V
125 °C
,150
°C
MECHANICAL DATA
Case:
DO-214AA, molded epoxy body,Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per J-STD-002 and JESD22B-106
Polarity:
Laser Band Denotes Cathode Band
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum DC blocking
voltage
Maximum average forward
rectified current at
TL(See Fig.1)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
SL32B
20
14
20
SL33B
30
21
30
SL34B
40
28
40
SL35B
50
35
50
SL36B
60
42
60
3
SL37B
70
49
70
SL38B
80
56
80
SL39B
90
63
90
SL310B
100
70
100
UNIT
V
V
V
A
Peak forward surge current
8.3 ms single half
sine-wave superimposed
on rated load
Operating junction
temperature range
Storage temperature range
I
FSM
T
J
T
STG
- 55 to + 125
80
- 55 to + 150
- 55 to + 150
A
°C
°C
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rev.1
 
 
 
SL32B thru SL310B
 
SL35B
SL36B
SL37B
SL38B
SL39B
SL310
B
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous
forward voltage
Maximum DC
reverse current at
rated DC blocking
voltage
Typical junction
capacitance
TEST
CONDITIONS
IF=3 A
TA=25℃
I
R
TA=100℃
4.0 V, 1 MHz
C
J
20
220
TBD
pF
SYMBOL
SL32B
SL33B
SL34B
UNI
T
V
V
F
0.42
0.2
0.5
0.15
0.75
mA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal
resistance
SYMBOL
R
θJA
(1)
R
θJT
(2)
SL32B
SL33B
SL34B
SL35B
SL36B
72
22
SL37B
SL38B
SL39B
SL310B
UNIT
°C/W
Notes
:
(1) Thermal resistance from junction to ambient,0.276×0.276
(7.0×7.0mm)copper
pads to each terminal
(2) Thermal resistance from junction to terminal, 0.276×0.276
(7.0×7.0mm)copper
pads to each terminal
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2.Maximum Non‐repetitive Peak Forward Surge 
Current 
 
Figure 4. Typical Reverse Characteristics
Figure 3. Typical Instantaneous Forward Characteristics 
Figure 4. Typical Reverse Characteristics 
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SL32B thru SL310B
 
Figure 5. Typical Junction Capacitance 
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
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