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2N1160

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size759KB,6 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N1160 Overview

Transistor,

2N1160 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSemitronics Corp.
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)7 A
ConfigurationSingle
Minimum DC current gain (hFE)20
JESD-609 codee0
Maximum operating temperature95 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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