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2N539

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size759KB,6 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N539 Overview

Transistor,

2N539 Parametric

Parameter NameAttribute value
MakerSemitronics Corp.
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)3.5 A
ConfigurationSingle
Minimum DC current gain (hFE)30
Maximum operating temperature95 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)10 W
surface mountNO
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