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2680F

Description
Fast Page DRAM, 4KX1, 200ns, NMOS, CDIP24, DIP-24
Categorystorage    storage   
File Size169KB,6 Pages
ManufacturerSignetics
Download Datasheet Parametric Compare View All

2680F Overview

Fast Page DRAM, 4KX1, 200ns, NMOS, CDIP24, DIP-24

2680F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSignetics
package instructionDIP, DIP22,.4
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time200 ns
I/O typeSEPARATE
JESD-30 codeR-GDIP-T24
JESD-609 codee0
memory density4096 bi
Memory IC TypeFAST PAGE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals24
word count4096 words
character code4000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4KX1
Output characteristics3-STATE
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP22,.4
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
refresh cycle64
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyNMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

2680F Related Products

2680F 2680-2F
Description Fast Page DRAM, 4KX1, 200ns, NMOS, CDIP24, DIP-24 Fast Page DRAM, 4KX1, 350ns, NMOS, CDIP24, DIP-24
Is it Rohs certified? incompatible incompatible
Maker Signetics Signetics
package instruction DIP, DIP22,.4 DIP, DIP22,.4
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Maximum access time 200 ns 350 ns
I/O type SEPARATE SEPARATE
JESD-30 code R-GDIP-T24 R-GDIP-T24
JESD-609 code e0 e0
memory density 4096 bi 4096 bit
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM
memory width 1 1
Number of functions 1 1
Number of ports 1 1
Number of terminals 24 24
word count 4096 words 4096 words
character code 4000 4000
Operating mode ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 4KX1 4KX1
Output characteristics 3-STATE 3-STATE
Package body material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
encapsulated code DIP DIP
Encapsulate equivalent code DIP22,.4 DIP22,.4
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Certification status Not Qualified Not Qualified
refresh cycle 64 64
Maximum supply voltage (Vsup) 5.25 V 5.25 V
Minimum supply voltage (Vsup) 4.75 V 4.75 V
Nominal supply voltage (Vsup) 5 V 5 V
surface mount NO NO
technology NMOS NMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm
Terminal location DUAL DUAL

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