SST12 Series
Technical Data
Data Sheet N2145, Rev.-
SST12 Series 12A TRIACs
Circuit Diagram
TO-220A(Ins)
TO-220B(Non-Ins)
Description
With high ability to withstand the shock loading of large current, SST12 series triacs provide high dv/dt rate with
strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially
recommended for use on inductive load.
Maximum Ratings:
Characteristics
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage(T
j
=25℃)
Repetitive peak reverse voltage(T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
RMS on-state current
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
2
t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
I
(TRMS)
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
P
GM
Condition
-
-
-
-
-
-
TO-220A(Ins)(T
C
=90℃)
TO-220B(Non-Ins)(T
C
=105℃)
-
-
-
-
-
-
Max.
-40-150
-40-125
600/800
600/800
V
DRM
+100
V
RRM
+100
12
120
78
50
4
1
5
Units
℃
℃
V
V
V
V
A
A
A
2
s
A/μs
A
W
W
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SST12 Series
Technical Data
Data Sheet N2145, Rev.-
Ordering Information
S ST 12 A -800 BW
SMC Diode Solutions
Triacs
I
T(RMS)
:12A
A:
TO-220A(Ins)
B:TO-220B(Non-Ins)
BW: I
GT1-3
≤ 50mA
CW: I
GT1-3
≤ 35mA
600:V
DRM
/V
RRM
≥ 600V
800:V
DRM
/V
RRM
≥ 800V
Device
SST12A-800CW, SST12A-800BW, SST12A-600BW
SST12B-800CW, SST12B-800BW
Package
TO-220A(Ins)
TO-220B(Non-Ins)
Shipping
50pcs/ Tube
50pcs/ Tube
Marking Diagram
Where XXXXX is YYWWL
SST12A-800BW
SST12B-800BW
YY
WW
L
= Part name
= Part name
= Year
= Week
= Lot Number
Mechanical Dimensions TO-220A(Ins)
SYMBOL
Min.
A
B
C
C2
C3
D
E
F
G
H
L1
L2
L3
V1
4.40
0.61
0.46
1.21
2.40
8.60
9.60
6.55
28.0
1.14
2.65
Millimeters
Typ.
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.95
29.8
1.70
2.95
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.378
0.258
1.102
0.045
0.104
Inches
Typ.
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.274
1.173
0.067
0.116
2.54
3.75
45°
0.1
0.148
45°
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SST12 Series
Technical Data
Data Sheet N2145, Rev.-
Mechanical Dimensions TO-220B(Non-Ins)
SYMBOL
Min.
A
B
C
C2
C3
D
E
F
G
H
L1
L2
L3
V1
4.40
0.61
0.46
1.21
2.40
8.60
9.60
6.20
28.0
1.14
2.65
Millimeters
Typ.
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.60
29.8
1.70
2.95
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.378
0.244
1.102
0.045
0.104
Inches
Typ.
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.260
1.173
0.067
0.116
2.54
3.75
45°
0.1
0.148
45°
Ratings and Characteristics Curves
FIG.1
Maximum power dissipation versus RMS
on-state current
P(w)
18
15
12
9
6
3
0
0
3
I
T(RMS)
(A)
6
9
12
16
I
T(RMS)
(A)
18
15
12
9
6
3
0
0
FIG.2:
RMS on-state current versus case
temperature
α=180°
TO-220B(Non-Ins)
TO-220A(Ins)
Tc (℃)
25
50
75
100
125
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SST12 Series
Technical Data
Data Sheet N2145, Rev.-
FIG.3:
Surge peak on-state current versus
number of cycles
150
120
90
60
30
0
1
Number of cycles
10
100
I
TSM
(A)
t=20ms
One cycle
FIG.4:
On-state characteristics (maximum
values)
I
TM
(A)
200
100
Tj=Tjmax
10
Tj=25℃
1000
1
0
1
2
V
TM
(V)
3
4
5
FIG.5:
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I t (dI/dt( - - ) < 50A/μs)
2
FIG.6:
Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
3.0
2.5
2.0
1.5
I
GT
I
H
&I
L
I
GT
,I
H
,I
L
(Tj) /I
GT
,I
H
,I
L
(Tj=25℃)
I
TSM
(A), I
2
t (A
2
s)
2000
1000
dI/dt( - - )
I
TSM
100
I
2
t
1.0
0.5
10
0.01
tp(ms)
0.1
1
10
20
0.0
-40
Tj (℃)
-20
0
20
40
60
80
100
120 140
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1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall
SMC Diode Solutions
be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s).
SMC Diode Solution
assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall
SMC Diode Solutions
be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or
SMC Diode Solutions.
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SMC
Diode Solutions.
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