Silicon Controlled Rectifier, 5000mA I(T), 400V V(DRM)
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | General Electric Solid State |
| package instruction | , |
| Reach Compliance Code | unknow |
| Maximum DC gate trigger current | 60 mA |
| Maximum DC gate trigger voltage | 2.5 V |
| Maximum holding current | 60 mA |
| Maximum leakage current | 2 mA |
| On-state non-repetitive peak current | 100 A |
| Maximum on-state voltage | 2.2 V |
| Maximum on-state current | 5000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Off-state repetitive peak voltage | 400 V |
| surface mount | NO |
| Trigger device type | SCR |
| 2N6397 | 2N6396 | 2N6395 | 2N6398 | |
|---|---|---|---|---|
| Description | Silicon Controlled Rectifier, 5000mA I(T), 400V V(DRM) | Silicon Controlled Rectifier | Silicon Controlled Rectifier | Silicon Controlled Rectifier, 5000mA I(T), 600V V(DRM) |
| Reach Compliance Code | unknow | unknow | unknown | unknow |
| Maker | General Electric Solid State | - | General Electric Solid State | General Electric Solid State |
京公网安备 11010802033920号
EEWORLD
