CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
General Purpose Transistor
VOLTAGE 50 Volts
APPLICATION
* Small Signal Amplifier .
2SC2412WGP
CURRENT 0.15 Ampere
FEATURE
* Surface mount package. (SC-70/SOT-323)
* Low saturation voltage V
CE(sat)
=-0.4V(max.)(I
C
=50mA)
* Low cob. Cob=2.0pF(Typ.)
* P
C
= 150mW (mounted on ceramic substrate).
* High saturation current capability.
(3)
(2)
SC-70/SOT-323
CONSTRUCTION
* NPN Silicon Transistor
* Epitaxial planner type
1.3±0.1
0.3±0.1
0.65
2.0±0.2
0.65
1.25±0.1
(1)
MARKING
* RA
0.05~0.2
0.1Min.
0.8~1.1
0~0.1
2.0~2.45
CIRCUIT
(1)
B
C
(3)
E
(2)
Dimensions in millimeters
SC-70/SOT-323
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
T
A
≤
25
O
C; Note 1
CONDITION
Open Emitter
Open Base
Open Collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
TOT
T
STG
T
J
T
AMB
MIN.
-
-
-
-
-
-
-
-55
-
-55
MAX.
60
50
7
150
150
15
250
+150
+150
+150
UNITS
Volts
Volts
Volts
mAmps
mAmps
mAmps
mW
o
C
C
C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2004-7
RATING CHARACTERISTICS ( 2SC2412WGP )
ELECTRICAL CHARACTERISTICS
( At T
A
= 25 C unless otherwise noted )
PARAMETERS
Collector Cut-off Current
Emitter Cut-off Current
CONDITION
I
E
=0; V
CB
=60V
I
C
=0; V
EB
=7V
V
CE
=6V; Note 1
I
C
=1mA;
Note 2
SYMBOL
I
CBO
I
CEO
MIN.
-
-
TYPE
-
-
MAX.
0.1
0.1
UNITS
uA
uA
o
DC Current Gain
h
FE
120
-
560
Collector-Emitter Saturation
Voltage
Base-Emitter Saturatio
Voltage
Output Collector Capacitance
Transition Frequency
I
C
=50mA; I
B
=5mA
I
C
=50mA; I
B
=5mA
I
E
=ie=0; V
CB
=12V;
f=1MHz
I
C
=2mA; V
CE
=12V;
f=100MHz
V
CEsat
V
BEsat
C
ob
f
T
-
-
-
-
-
-
2
180
0.4
1.1
3.5
-
Volts
mVolts
pF
MHz
Note :
1. Pulse test: tp
≤
300uSec;
δ ≤
0.02.
2. h
FE:
Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560
RATING CHARACTERISTIC CURVES ( 2SC2412WGP )
Fig.1
50
Grounded emitter propagation
characteristics
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
Fig.2
100
Grounded emitter output
characteristics (1)
0.50mA
COLLECTOR CURRENT : I
C
(mA)
Fig.3
10
Grounded emitter output
characteristics (2)
30uA
27uA
Ta=25
O
C
COLLECTOR CURRENT : I
C
(mA)
20
10
5
Ta=100
O
C
25
Ο
C
55
O
C
80
mA
0.45
A
0.40m
0.35mA
Ta=25
O
C
8
24uA
21uA
0.30mA
60
0.25mA
0.20mA
40
0.15mA
0.10mA
20
0.05mA
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
6
18uA
15uA
2
1
0.5
0.2
0.1
0
4
12uA
9uA
2
6uA
3uA
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0
4
8
I
B
=0A
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
RATING CHARACTERISTIC CURVES ( 2SC2412WGP )
Fig.4 DC current gain vs.
collector current (1)
500
Ta=25
O
C
Fig.5 DC current gain vs.
collector current (2)
500
Ta=100
O
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.5
V
CE
=5V
Ta=25
O
C
DC CURRENT GAIN : h
FE
200
V
CE
=5V
3V
1V
DC CURRENT GAIN : h
FE
200
25
O
C
-55 C
O
0.2
I
C
/I
B
=50
20
10
100
100
0.1
0.05
50
50
0.02
20
10
0.2
20
10
0.2
0.5 1
2
5
10 20
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (1)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.8 Collector-emitter saturation
voltage vs. collector current (2)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.9 Gain bandwidth product vs.
emitter current
TRANSITION FREQUENCY : f
T
(MHz)
0.5
I
C
/I
B
=10
0.5
I
C
/I
B
=50
500
Ta=25
O
C
V
CE
=6V
0.2
Ta=100
O
C
25
O
C
-55
O
C
0.2
0.1
0.05
Ta=100
O
C
25
O
C
-55
O
C
0.1
0.05
200
0.02
100
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100
0.01
0.2
0.5 1
2
5
10
20
50 100 200
50
0.5
1
2
5
10
20
50
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
BASE COLLECTOR TIME CONSTANT : Cc·r
bb'
(ps)
Ta=25
O
C
f=1MHz
I
E
=0A
I
C
=0A
Fig.11 Base-collector time constant
vs. emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
20
200
Ta=25
O
C
f=32MH
Z
V
CB
=6V
10
Cib
100
5
50
2
Co
b
20
1
0.2
0.5
1
2
5
10
20
50
10
0.2
0.5
1
2
5
10
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
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