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1N4004G

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size69KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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1N4004G Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM),

1N4004G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current40 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage400 V
surface mountNO
BL
GALAXY ELECTRICAL
GLASS PASSIVATED RECTIFIERS
FEATURES
The plastic package carries underwrites laboratory
flammability classification 94V-O
Low reverse leakage
High current capability
Glass passivated junction
Low forward voltage drop
High temperature soldering guaranteed:
vvvvv350
/10 seconds, 0.375"(9.5mm) lead length,
wwc5lbs,
(2.3kg) tension
1N4001G --- 1N4007G
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
DO - 41
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
1N
1N
1N
1N
1N
1N
UNITS
4001G 4002G 4003G 4004G 4005G 4006G 4007G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
40.0
A
Maximum instantaneous forw ard voltage
at 1.0 A
Maximum reverse current
@T
A
=25
(Note)
V
F
I
R
C
J
T
J
T
STG
1.1
5.0
50.0
15
- 55 ---- + 175
- 55 ---- +
175
V
A
pF
at rated DC blocking voltage @T
A
=100
Typical junction capacitance
Operating junction temperature range
Storage temperature range
NOTE: Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.
www.galaxycn.com
1.
Document Number 0269001
BL
GALAXY ELECTRICAL

1N4004G Related Products

1N4004G 1N4001G 1N4005G 1N4006G 1N4003G
Description Rectifier Diode, 1 Element, 1A, 400V V(RRM), Rectifier Diode, 1 Element, 1A, 50V V(RRM), Rectifier Diode, 1 Element, 1A, 600V V(RRM), Rectifier Diode, 1 Element, 1A, 800V V(RRM), Rectifier Diode, 1 Element, 1A, 200V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknow unknown unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 40 A 40 A 40 A 40 A 40 A
Number of components 1 1 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 400 V 50 V 600 V 800 V 200 V
surface mount NO NO NO NO NO
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