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FEATURES
GALAXY ELECTRICAL
5A1 - - - 5A10
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 5.0 A
PLASTIC SILICON RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Isopropanol
and similar solvents
DO - 27
MECHANICAL DATA
Case: JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
5A1
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
Peak forward surge current
10ms single half-sine-wave
superimposed on rated load @T
J
=125
Maximum instantaneous forward voltage
@5.0A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
5A2
200
140
200
5A4
400
280
400
5.0
5A6
600
420
600
5A8
800
560
800
5A10
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
100
70
100
@T
A
=75
I
F(AV)
I
FSM
300
A
V
F
I
R
C
J
R
JA
1.2
10.0
100.0
80
15
- 55 ---- +150
- 55 ---- +150
V
A
pF
/W
@T
A
=25
@T
A
=100
(Note1)
(Note2)
Operating junction temperature range
Storage temperature range
2. Thermal resistance f rom junction to ambient.
T
J
T
STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
www.galaxycn.com
Document Number 0260011
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
INSTANTANEOUS FORWARD CURRENT
AMPERES
5A1 - - - 5A10
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6
0.8
1.0
1.2 1.4 1.6
10
8
6
AMPERES
4
2
0
0
25
50
75
100
125
150
175
200
T
J
=25
Pulse Width=300uS
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 --MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
400
200
f=1MHz
T
J
=25
T
J
=125
℃
8.3ms Single Half
Sine-Wave
CAPACITANCE, pF
300
100
AMPERES
200
100
10
.1
.2
.4
1.0
2
4
10
20
40
100
0
1
2
4
8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, VOLTS
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Document Number 0260011
BL
GALAXY ELECTRICAL
2.
Microchip MCU
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