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B500S

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size164KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric Compare View All

B500S Overview

Rectifier Diode,

B500S Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknow
ECCN codeEAR99
BL
GALAXY ELECTRICAL
BRIDGE RECTIFIERS
CURRENT:
DB
-
S
B40S - - - B500S
VOLTAGE RANGE
: 80 -- 1000 V
GLASS PASSIVATED SILICON
0.8 A
FEATURES
Rating to 1000 V
Low forward voltage drop
Small size,plastic case
Glass passivated junction
Weight: 0.016 ounces, 0.45grams
Mounting position: Any
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
B40S B80S B125S B250S B380S B500S
UNITS
Maximum alternating input voltage
Repetitive peak reverse voltage
Maximum average forward
rectified output current
Peak forward surge current
8.3ms single half-sine-wave
Maximum forwand voltage drop
per element at 0.4 A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage
per element
@T
A
=125
Thermal resistance junction to ambient air
Operating temperature range
Storage temperature range
@Tc= 50
V
VRMS
V
RRM
I
(AV)
I
FSM
V
F
I
R
0.5
R
θJA
T
j
T
STG
60
- 55 --- + 150
- 55 --- + 150
www.galaxycn.com
50
80
110
160
170
250
0.8
40
1.1
10.0
420
600
560
800
700
1000
V
V
A
A
V
A
mA
K/W
Document Number 0287122
BL
GALAXY ELECTRICAL
1.

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B500S
Description Rectifier Diode,
Maker Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknow
ECCN code EAR99
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