50PF(R)...(W) Series
Vishay High Power Products
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 50 A
50PF(R)...
50PF(R)...W
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• UL approval pending
RoHS
COMPLIANT
DO-203AB (DO-5)
DO-203AB (DO-5)
• RoHS compliant
• Designed and qualified for multiple level
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
50 A
• Battery charges
• Converters
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
VALUES
50
T
C
140
78
800
830
3200
2900
400 to 1200
- 55 to 180
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
40
50PF(R)...(W)
80
120
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
960
1440
9
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
Document Number: 93516
Revision: 01-Oct-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
50PF(R)...(W) Series
Vishay High Power Products
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 50 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)
r
f
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
VALUES
50
140
78
800
830
670
Sinusoidal half wave,
initial T
J
= 150 °C
700
3200
2900
2260
2050
32 000
0.77
4.30
1.40
A
2
√s
V
mΩ
V
A
2
s
A
UNITS
A
°C
A
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 125 A, T
J
= 25 °C, t
p
= 400 µs rectangular wave
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Tighting on nut
(1)
Not lubricated threads
Tighting on Hexagon
(2)
Lubricated threads
TEST CONDITIONS
VALUES
- 55 to 180
0.51
K/W
0.25
3.4
+ 0 - 10 %
(30)
2.3
+ 0 - 10 %
(20)
15.8
0.56
See dimensions - link at the end of datasheet
UNITS
°C
Allowable mounting torque
N·m
(lbf · in)
g
oz.
Approximate weight
Case style
DO-203AB (DO-5)
Notes
(1)
As general recommendation we suggest to tight on Hexagon and not on nut
(2)
Torque must be applicable only to Hexagon and not to plastic structure
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93516
Revision: 01-Oct-08
50PF(R)...(W) Series
Standard Recovery Diodes,
Vishay High Power Products
Generation 2 DO-5 (Stud Version), 50 A
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.11
0.16
0.20
0.29
0.49
RECTANGULAR CONDUCTION
0.10
0.16
0.22
0.31
0.50
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
180
170
160
Maximum Allowable Case Temperature (°C)
50PF(R) Serie
RthJC = 0.51 K/W
180
170
160
150
30°
50PF(R) Series
RthJC (DC) = 0.51 K/W
Conduction Angle
Conduction Period
150
140
180°
130
120
110
0
10
20
30
30°
60°
120°
90°
140
130
120
0
10 20
60°
90°
120°
180°
DC
40
50
60
30
40 50
60 70
80
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Allowable Forward Power Loss (W)
100
80
60
40
20
0
0
180°
120°
90°
60°
30°
RMS Limit
1
K/W
0.7
1.5
K/
W
2K
/W
K/
W
3K
5K
/W
/W
Conduction Angle
7 K
/W
50PF(R) Series
Tj = 180°C
10 K/
W
10
20
30
40
50
0
60
30
60
90
120
150
180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93516
Revision: 01-Oct-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
50PF(R)...(W) Series
Vishay High Power Products
Maximum Allowable Forward Power Loss (W)
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 50 A
100
80
60
40
20
50PF(R) Series
Tj = 180°C
180°
120°
90°
60°
30°
RMS Limit
1
K/W
0.7
1.5
K/
W
K/
W
DC
2K
/W
3K
/W
5K
Conduction Period
/W
7K
/W
10 K/
W
0
0
20
40
60
0
80
30
60
90
120
150
180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Peak Haf Sine Wave Forward Current (A)
800
700
600
500
400
300
200
1
1000
Rated Vrrm Applied Following Surge.
Initial Tj = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
100
10
Tj = 25°C
Tj = 180°C
50PF(R) Series
50PF(R) Series
1
10
100
0
1
2
3
4
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Peak Haf Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
800
Initial Tj = 150°C
700
No Voltage Reapplied
Transient Thermal Impedance Z
thJC
(K/W)
900
1
Steady State Value
RthJC = 0.51 K/W
(DC Operation)
600
500
400
300
200
50PF(R) Series
Rated Vrrm Reapplied
0.1
50PF(R) Series
100
0.01
0.1
Pulse Train Duration (s)
1
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93516
Revision: 01-Oct-08
50PF(R)...(W) Series
Standard Recovery Diodes,
Vishay High Power Products
Generation 2 DO-5 (Stud Version), 50 A
ORDERING INFORMATION TABLE
Device code
50
1
1
PF
2
-
R
3
120
4
W
5
50 = Standard device
52 = Isolated lead on standard terminal
with silicone sleeve available for 1200 V only
(red = Reverse polarity)
(blue = Normal polarity)
2
3
4
5
-
-
-
-
PF = Plastic package
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = Standard terminal
(see dimensions for 50PF(R)... - link at the end of datasheet)
W = Wire terminal
(see dimensions for 50PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95345
Document Number: 93516
Revision: 01-Oct-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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