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SM572044082D3G7

Description
DRAM
Categorystorage    storage   
File Size230KB,25 Pages
ManufacturerSMART Modular Technology Inc
Download Datasheet Parametric View All

SM572044082D3G7 Overview

DRAM

SM572044082D3G7 Parametric

Parameter NameAttribute value
MakerSMART Modular Technology Inc
package instruction,
Reach Compliance Codeunknow
SMART
Features
®
SM5720440UUDUGU
March 27, 1997
Modular Technologies
32MByte (4M x 72) DRAM Module - 4Mx4 based
168-pin DIMM, Non-buffered, ECC
Part Numbers
SM57204400UDUGU
SM57204401UDUGU
SM57204408UDUGU
SM57204409UDUGU
Standard
:
JEDEC
Configuration
:
ECC
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
2K/4K
Device Physicals
:
300mil SOJ/TSOP
Lead Finish
:
Gold
Length x Height
:
5.250" x 0.950"
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
AMP-390052-3 (5.0V)/390052-6 (3.3V)
:
:
:
:
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5720480UUDUGU
:
4Mx72,
2Mx8 based.
Functional Diagram
CAS3#
CAS2#
CAS1#
CAS0#
RAS0#
WE0#
OE0#
4Mx36
Block
4Mx36
Block
CAS7#
CAS6#
CAS5#
CAS4#
RAS2#
WE2#
OE2#
CB0~CB3
DQ0~DQ31
CB4~CB7
DQ32~DQ63
DQ0~DQ63, CB0~CB7
SA0
SA1
SA2
SCL
SA0
SDA
SA1
SA2
SCL
SERIAL PD
EEPROM
SDA
Notes : 1. A0~A10/A11 are connected to all DRAMs
(A11 is NC for 2K refresh module).
2. Each 4Mx36 Block comprises of nine 4Mx4 DRAMs.
3. Refer to note on page 2 for details on CAS# control scheme.
( All specifications of this device are subject to change without notice.)
V
CC
V
SS
Decoupling capacitors
to all devices.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
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