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AT29BV020-35TI

Description
2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
Categorystorage    storage   
File Size150KB,10 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric View All

AT29BV020-35TI Overview

2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

AT29BV020-35TI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTSOP1
package instructionTSOP1, TSSOP32,.8,20
Contacts32
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time350 ns
startup blockBOTTOM/TOP
command user interfaceNO
Data pollingYES
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length18.4 mm
memory density2097152 bi
Memory IC TypeFLASH
memory width8
Humidity sensitivity level3
Number of functions1
Number of departments/size1K
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size256
Maximum standby current0.00005 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width8 mm
Maximum write cycle time (tWC)20 ms
Base Number Matches1
AT29BV020
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time - 250 ns
Low Power Dissipation
15 mA Active Current
20
µA
CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 8 KB Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 250 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20
µA.
The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
Low Voltage Flash family of products.
(continued)
2 Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
CMOS Flash
Memory
AT29BV020
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
TSOP Top View
PLCC Top View
Type 1
0402B
4-13

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