2N1730 datasheet, PDF - EEWORLD Datasheet

2N1730: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size56KB，1 Pages; ManufacturerGPD Optoelectronics Corp

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2N1730 Overview

Transistor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	GPD Optoelectronics Corp
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.3 A
Configuration	Single
Minimum DC current gain (hFE)	30
JESD-609 code	e0
Maximum operating temperature	85 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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