BZV55-C4V3 datasheet, PDF - EEWORLD Datasheet

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BZV55-C4V3: DescriptionZener Diode, 4.3V V(Z), 5%, Silicon, Unidirectional,; CategoryDiscrete semiconductor diode; File Size294KB，7 Pages; ManufacturerGeneral Instrument Corp

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BZV55-C4V3 Overview

Zener Diode, 4.3V V(Z), 5%, Silicon, Unidirectional,

BZV55-C4V3 Parametric

Parameter Name	Attribute value
Maker	General Instrument Corp
package instruction	O-LELF-R2
Reach Compliance Code	unknow
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JESD-30 code	O-LELF-R2
Number of components	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Nominal reference voltage	4.3 V
surface mount	YES
technology	ZENER
Terminal form	WRAP AROUND
Terminal location	END
Maximum voltage tolerance	5%
Working test current	5 mA

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NEW PRODUCT

BZV55 SERIES

ZENER DIODES

Mini-MELF

FEATURES

♦

Silicon Planar Power Zener Diodes

∅

.063 (1.6)

.055 (1.4)

Cathode Mark

♦

For use as low voltage stabilizer or

voltage reference.

♦

The Zener voltages are graded according to the

international E 24 standard. Higher Zener voltages

and 1% tolerance available on request.

♦

Diodes available in these tolerance series:

2% BZV55-B,

3% BZV55-F,

5% BZV55-C.

MECHANICAL DATA

Case:

Mini-MELF Glass Case (SOD-80)

Weight:

approx. 0.05 g

Cathode band color:

Blue

.142 (3.6)

.134 (3.4)

.019 (0.48)

.011 (0.28)

Dimensions are in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOL

VALUE

UNIT

Zener Current see Table “Characteristics”

Power Dissipation at T

flange

= 50°C

Power Dissipation at T

= 50°C

Junction Temperature

Storage Temperature Range

Continuous Forward Current

Peak reverse power disipation (non-repetitive) tp=100µs

tot

ZSM

500

400

(1)

°C

–65 to +200

250

(2)

SYMBOL

MIN.

TYP.

MAX.

UNIT

Thermal Resistance Junction to Ambient Air

Thermal Resistance Junction to Lead

Forward Voltage at I

= 10 mA

thJA

thJL

0.38

0.9

(1)

K/mW

0.30

NOTES:

1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm

2) Tj = 150°C

9/29/98

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