PPB
Metallized polypropylene film capacitor
MKP - High pulse - High performance
Insulation resistance (IR)
Measured between terminals, at 25±°C, after 1 minute of
electrification at 100Vdc
Cr
≤ 0,33µF
> 0,33µF
IR
≥ 100GΩ
≥ 30000s
Main applications
Snubber, SCR commutating circuits, electronic ballasts, protection
circuits in SMPSs, deflectors circuits in TV sets, high voltage, high
current and high pulse operation
Dielectric
Polypropylene
Electrodes
Vacuum deposited metal layers
Coating
Solvent resistant plastic case with resin sealing (UL 94 V-0). Flame
retardant execution
Construction
Extended double side metallized carrier film, internal series
connection and metallized film for Ur ≥ 630 VDC (refer to general
technical information)
Terminals
Tinned copper wire (lead free)
Reference standard
IEC 60384/16, IEC 60384/17, IEC 60068, CECC 30000, RoHS
compliant
Climatic category
55/100/56 (IEC 60068/1), FMD (DIN40040)
Operating temperature range
-55°...+105°C
Rated capacitance (Cr)
0,001µF to 6,8µF, in compliance with IEC 60063, E6 series. Refer
to article table
Capacitance tolerance (at 1kHz)
±10% (code=K), ±5% (code=J), ±20% (code=M). Other tolerances
upon request
Capacitance temperature coefficient
Refer to graphs in general technical information
Long term stability (at 1 kHz)
Capacitance variation ≤ ±0,5% after a period of 2 years at
standard environmental conditions
Rated voltage (Ur)
250, 400, 630, 1000, 1600, 2000 Vdc
(Permissible AC voltage at 60Hz: 160, 200, 400, 600, 650, 700
Vac)
Category voltage (Uc)
Uc=Ur at +85°C; Uc=0,8xUr (0,7xPermissible AC voltage) at
+100°C
Temperature derated voltage
For T> +85°C, Ur must be decreased 1,25% (permissible AC
voltage must be decreased 2,25%) for every °C exceeding +85°C
Self inductance
≤ 1nH/mm of capacitor pitch
Maximum pulse rise time
Refer to article table. The pulse characteristic Ko depends on the
voltage waveform. In any case the value given in the article table
must not be exceeded
Dissipation factor (DF), max.
tgδ x10
-4
, measured at 25±5°C
Freq.
1kHz
10kHz
100kHz
Ed.02 Rev.01
Cr≤0,1μF
4
5
16
0,1μF<Cr≤1μF
4
6
-
1μF<Cr≤4,7μF
5
-
Test voltage between terminals (Ut)
1,6xUr (DC) or 1,5xUrac (AC) applied for 2s at 25±5°C (1 minute
for type test)
Damp heat test (steady state)
Test conditions:
Temperature= +40±2°C
Relative humidity=93±2%
Test duration= 56 days
Performance:
Capacitance change ≤ ±1%
DF change ≤ 0.0010 at 10kHz for Cr ≤ 1μF
DF change ≤ 0.0010 at 1kHz for Cr > 1µF
IR≥ 50% of initial limit value
Endurance test (DC)
Test conditions:
Temperature= +85±2°C
Test duration= 2000h
Voltage applied=1,25xUr(DC)
Performance:
Capacitance change ≤ ±1%
DF change ≤ 0.0010 at 10kHz for Cr ≤ 1μF
DF change ≤ 0.0010 at 1kHz for Cr > 1µF
IR≥ 50% of initial limit value
AC (50/60Hz) Endurance test (for Ur>400Cdc ratings only)
Test conditions:
Temperature= +85±2°C
Test duration= 2000h
Voltage applied=1,25xUr(AC)
Performance:
Capacitance change ≤ ±5%
DF change ≤ 0.0010 at 10kHz for Cr ≤ 1μF
DF change ≤ 0.0010 at 1kHz for Cr > 1µF
IR≥ 50% of initial limit value
Resistance to soldering heat test
Test conditions:
Solder bath temperature= +260±5°C
Dipping time (with heat screen)= 10±1s
Performance:
Capacitance change ≤ ±1%
DF change ≤ 0.0010 at 10kHz for Cr ≤ 1μF
DF change ≤ 0.0010 at 1kHz for Cr > 1µF
IR≥ 50% of initial limit value
Reliability (MIL HDB 217)
Application conditions:
Applied voltage= 0,5 x Ur(DC)
Temperature= +40±2°C
Failure rate: (1FIT=1x10
-9
failures/components x hours)
≤ 2FIT for Ur ≤ 400Vdc
≤ 1FIT for Ur > 400Vdc
Failure criteria (DIN44122):
Capacitance change > ±10%
DF change > 2 x initial value
IR< 0,005 x initial limit value
Short or open circuit
13.1
09.2008
Microcontroller MCU
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