2SA812G datasheet, PDF - EEWORLD Datasheet

2SA812G: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), PNP; CategoryDiscrete semiconductor The transistor; File Size36KB，1 Pages; ManufacturerKuwait Semiconductor Co., Ltd.

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2SA812G Overview

Small Signal Bipolar Transistor, 0.1A I(C), PNP

Parameter Name	Attribute value
Maker	Kuwait Semiconductor Co., Ltd.
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.1 A
Configuration	Single
Minimum DC current gain (hFE)	200
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.45 W
surface mount	NO

	2SA812G	2SA812L
Description	Small Signal Bipolar Transistor, 0.1A I(C), PNP	Small Signal Bipolar Transistor, 0.1A I(C), PNP
Reach Compliance Code	unknow	unknown
Maximum collector current (IC)	0.1 A	0.1 A
Configuration	Single	Single
Minimum DC current gain (hFE)	200	300
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.45 W	0.45 W
surface mount	NO	NO

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