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2N3020

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size269KB,3 Pages
ManufacturerSemiconductors Ltd.
Download Datasheet Parametric Compare View All

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2N3020 Overview

Transistor

2N3020 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSemiconductors Ltd.
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)1 A
ConfigurationSingle
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)80 MHz

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Description Transistor Transistor Array/Network Resistor, Bussed, Thin Film, 0.1W, 20800ohm, 50V, 0.25% +/-Tol, -25,25ppm/Cel, 2021, Transistor Transistor Transistor Transistor
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknow unknown compliant unknown unknow unknow unknow
Maximum operating temperature 175 °C 175 °C 150 °C 200 °C 200 °C 200 °C 200 °C
surface mount NO NO YES NO NO NO NO
Maker Semiconductors Ltd. Semiconductors Ltd. - Semiconductors Ltd. Semiconductors Ltd. Semiconductors Ltd. Semiconductors Ltd.
Configuration Single Single - Single Single Single Single
JESD-609 code e0 e0 - e0 e0 e0 e0
Polarity/channel type NPN NPN - NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.8 W 1.8 W - 0.3 W 0.8 W 0.5 W 1.2 W
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Minimum DC current gain (hFE) - 40 - 40 20 35 50
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