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BCW30

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size274KB,6 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric View All

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Transistor,

BCW30 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)215
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)

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