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BCW60B

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size139KB,4 Pages
ManufacturerNorth American Philips Discrete Products Div
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BCW60B Overview

Transistor,

BCW60B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)175
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)125 MHz

BCW60B Related Products

BCW60B BCW60D BCW60A
Description Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknow unknown unknow
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Configuration Single Single Single
Minimum DC current gain (hFE) 175 380 120
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz

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