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BLF242

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size431KB,8 Pages
ManufacturerNorth American Philips Discrete Products Div
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BLF242 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BLF242 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)16 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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