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3.0SMCJ110C

Description
Trans Voltage Suppressor Diode
CategoryDiscrete semiconductor    diode   
File Size127KB,4 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Download Datasheet Parametric View All

3.0SMCJ110C Overview

Trans Voltage Suppressor Diode

3.0SMCJ110C Parametric

Parameter NameAttribute value
MakerDIOTEC
Reach Compliance Codecompli
ECCN codeEAR99
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
3.0SMCJ5.0 ... 3.0SMCJ170CA
3.0SMCJ5.0 ... 3.0SMCJ170CA
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage
Version 2014-02-19
7.9
±0.2
2.2
±0.3
2.1
±0.2
Peak pulse power dissipation
Impuls-Verlustleistung
Nominal Stand-off voltage
Nominale Sperrspannung
Plastic case
Kunststoffgehäuse
3000 W
5.0...170 V
~ SMC
~ DO-214AB
0.21 g
1.2
0.15
5.8
Type
Typ
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rollen
±0.2
7.2
±0.5
Dimensions - Maße [mm]
For bidirectional types (add suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (ergänze Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings and Characteristics
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
T
A
= 25°C
T
T
= 75°C
T
A
= 25°C
I
F
= 100 A
P
PPM
3
Grenz- und Kennwerte
3000 W
1
)
6W
300 A
2
)
< 3.0 V
2
)
-50...+150°C
-50...+150°C
< 33 K/W
3
)
< 10 K/W
P
M(AV)
I
FSM
V
F
T
j
T
S
R
thA
R
thT
1
2
3
Non-repetitive pulse see curve I
PP
= f (t) / P
PP
= f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I
PP
= f (t) / P
PP
= f (t)
Unidirectional diodes only – Nur für unidirektionale Dioden
Mounted on P.C. board with 50 mm
2
copper pads at each terminal
Montage auf Leiterplatte mit 50 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
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