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1N5470

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7
CategoryDiscrete semiconductor    diode   
File Size115KB,3 Pages
ManufacturerLockheed Martin
Download Datasheet Parametric View All

1N5470 Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7

1N5470 Parametric

Parameter NameAttribute value
MakerLockheed Martin
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio2.9
Nominal diode capacitance33 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor500
Maximum reverse current0.02 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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