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GC1501F

Description
Variable Capacitance Diode, 1pF C(T), 30V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

GC1501F Overview

Variable Capacitance Diode, 1pF C(T), 30V, Silicon, Abrupt

GC1501F Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionX-CXMW-F2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio3.4
Nominal diode capacitance1 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeX-CXMW-F2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeUNSPECIFIED
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor3600
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountYES
Terminal formFLAT
Terminal locationUNSPECIFIED
Varactor Diode ClassificationABRUPT
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