Variable Capacitance Diode, Ultra High Frequency, 3.6pF C(T), 25V, Silicon, Abrupt
| Parameter Name | Attribute value |
| Maker | Msi Electronics Inc |
| package instruction | O-CEMW-N2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | LOW INDUCTANCE |
| Minimum breakdown voltage | 25 V |
| Configuration | SINGLE |
| Minimum diode capacitance ratio | 4.2 |
| Nominal diode capacitance | 3.6 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | ULTRA HIGH FREQUENCY |
| JESD-30 code | O-CEMW-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | MICROWAVE |
| Maximum power dissipation | 5 W |
| Certification status | Not Qualified |
| minimum quality factor | 900 |
| Maximum repetitive peak reverse voltage | 25 V |
| Maximum reverse current | 2e-8 µA |
| Reverse test voltage | 20 V |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| Varactor Diode Classification | ABRUPT |
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