Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Bidirectional, 1 Element, Silicon,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Semicon Components Inc |
| package instruction | O-XALF-W2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum breakdown voltage | 13.6 V |
| Minimum breakdown voltage | 11.1 V |
| Breakdown voltage nominal value | 11 V |
| Shell connection | ISOLATED |
| Maximum clamping voltage | 18.8 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | O-XALF-W2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak reverse power dissipation | 500 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | BIDIRECTIONAL |
| Maximum power dissipation | 1 W |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 10 V |
| Maximum reverse current | 2 µA |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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