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TZB30CB

Description
Trans Voltage Suppressor Diode, 400W, Bidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size117KB,2 Pages
ManufacturerSemicon Components Inc
Download Datasheet Parametric View All

TZB30CB Overview

Trans Voltage Suppressor Diode, 400W, Bidirectional, 1 Element, Silicon

TZB30CB Parametric

Parameter NameAttribute value
MakerSemicon Components Inc
package instructionO-XALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage31.5 V
Minimum breakdown voltage28.5 V
Breakdown voltage nominal value30 V
Shell connectionISOLATED
Maximum clamping voltage41.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum reverse current2 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
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