BIPOLARICS INC.
Part Number BMT0912B250-4050
SILICON MICROWAVE POWER TRANSISTOR
FEATURES:
Package 4050: 0.500” x 0.400” 2 Lead Flange
•
P = 250 W @ 0.9 - 1.2 GHz
•
High Gain
out
G
PE
= 7.5 dB to 8.2 dB
•
High Gain Bandwidth Product
f
t
= 6.5 GHz @ I
C
= 5.0 A
•
High Reliability
Gold Metallization
Nitride Passivation
•
Ballasted Emitter
•
Hermetic Stripline BeO Package
•
Common Base
•
Built-In Matching Network for
Broadband Operation
BMT0912B250-4050 is a 250 watt NPN Micro-
wave Transistor designed for pulse power amplifier
applications in the 0.9 to 1.2 GHz range. Avionics
application include IFF, TACAN, and DME. Ad-
vanced processing techniques such as ion implanted
junctions, ballast resistors, gold metallized oxide
isolation and nitrade passivations assure high perfor-
mance and reliability. Hermetic BeO package with
gold-tin seal is compatible with the most demanding
high reliability industrial and military standards.
Performance
Description:
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
60
Collector-Emitter Voltage
30
Emitter-Base Voltage
3.0
Collector Current
12.0
Junction Temperature
200
Storage Temperature -65 to 200
V
V
V
A
o
C
o
C
Thermal Data:
θ
JC
Thermal Resistance
4.5
C/W
Data:
PARAMETERS & CONDITIONS
V
CB
= 50 V, I
C
= 5.0 A, Class C
f = 1.2 GHz
Class C
W
%
pF
W
250
20
500
300
50
60
14.0
600
100
SYMBOL
UNIT
MIN. TYP.
MAX.
P
1dB
η
h
FE
C
OB
P
T
Power output at 1 dB compression:
Collector Efficiency
Forward Current Transfer Ratio: V
CB
= 50 V, I
C
= 5.0 A
Output Capacitance:
Total Power Dissipation
f = 1 MHz, I
E
= 0
Real-time operating system RTOS
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