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5KP70A

Description
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size102KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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5KP70A Overview

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

5KP70A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Breakdown voltage nominal value81.9 V
Maximum clamping voltage113 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage70 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
5KP5.0 thru 5KP188A
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• P600, glass passivated chip junction
• Available in uni-directional polarity only
• 5000 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
Case Style P600
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
T
J
max.
5.0 V to 188 V
5000 W
8.0 W
500 A
175 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave (Fig. 5)
Instantaneous forward voltage at 100 A
(2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
5000
See next table
8.0
600
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
Document Number: 88308
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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