Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Harris |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| application | ULTRA FAST RECOVERY |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.975 V |
| JESD-30 code | O-LALF-W2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 150 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 6 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 50 V |
| Maximum reverse current | 5 µA |
| Maximum reverse recovery time | 0.035 µs |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| GE1301 | GE1303 | GE1302 | GE1304 | |
|---|---|---|---|---|
| Description | Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Reach Compliance Code | unknow | unknown | unknown | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| application | ULTRA FAST RECOVERY | ULTRA FAST RECOVERY | ULTRA FAST RECOVERY | ULTRA FAST RECOVERY |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.975 V | 0.975 V | 0.975 V | 0.975 V |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Maximum non-repetitive peak forward current | 150 A | 150 A | 150 A | 150 A |
| Number of components | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C |
| Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C |
| Maximum output current | 6 A | 6 A | 6 A | 6 A |
| Package body material | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 50 V | 150 V | 100 V | 200 V |
| Maximum reverse current | 5 µA | 5 µA | 5 µA | 5 µA |
| Maximum reverse recovery time | 0.035 µs | 0.035 µs | 0.035 µs | 0.035 µs |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maker | Harris | Harris | - | Harris |
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