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2SB828

Description
Bipolar Transistors;PNP;-12A;-50V;TO-3PN
CategoryDiscrete semiconductor   
File Size221KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SB828 Overview

Bipolar Transistors;PNP;-12A;-50V;TO-3PN

2SB828 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknow
isc
Silicon PNP Power Transistor
2SB828
DESCRIPTION
·High
Collector Current:: I
C
= -12A
·Low
Collector Saturation Voltage
: V
CE(sat)
= -0.5V(Max)@I
C
= -6A
·Wide
Area of Safe Operation
·Complement
to Type 2SD1064
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for relay drivers,high-speed inverters,converters,
and other gereral high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-60
-50
-6
-12
-17
80
150
-55~150
UNIT
V
V
V
A
A
W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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