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2SC3725

Description
Bipolar Transistors;NPN;15A;400V;TO-3PN
CategoryDiscrete semiconductor   
File Size199KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SC3725 Overview

Bipolar Transistors;NPN;15A;400V;TO-3PN

2SC3725 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknow
isc
Silicon NPN Power Transistor
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 400V(Min)
·High
Switching Speed
·High
Reliability
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching
regulators
·Ultrasonic
generators
·High
frequency inverters
·General
purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
450
400
400
10
15
5
80
150
-55~150
UNIT
V
V
V
V
A
A
W
2SC3725
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.56
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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