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2SD1064

Description
Bipolar Transistors;NPN;12A;50V;TO-3PN
CategoryDiscrete semiconductor   
File Size218KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SD1064 Overview

Bipolar Transistors;NPN;12A;50V;TO-3PN

2SD1064 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)80 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max0.4 V
isc
Silicon NPN Power Transistors
2SD1064
DESCRIPTION
·Low
Collector Saturation Voltage
: V
CE(sat)
= 0.4V(Max)@ I
C
= 6A
·Wide
Area of Safe Operation
·Complement
to Type 2SB828
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for relay drivers , high-speed inverters,
converters,and other general high-current switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
PARAMETER
Collector-Base Voltage
VALUE
60
UNIT
V
V
CEO
Collector-Emitter Voltage
50
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current-Continuous
12
A
I
CP
Collector Current-Pulse
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
17
A
P
C
80
W
T
J
150
T
stg
Storage Temperature Range
-55~150
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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