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BDX18

Description
Bipolar Transistors;PNP;-15A;-60V;TO-3
CategoryDiscrete semiconductor   
File Size209KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BDX18 Overview

Bipolar Transistors;PNP;-15A;-60V;TO-3

BDX18 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknow
isc
Silicon PNP Power Transistors
BDX18
DESCRIPTION
·Excellent
Safe Operating Area
·DC
Current Gain-
: h
FE
=20-70@I
C
= -4A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= -1.1V(Max)@ I
C
= -4A
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CER
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-100
-70
-60
-7
-15
-7
117
200
-65~200
UNIT
V
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.5
UNIT
℃/W
isc website
www.iscsemi.com
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isc & iscsemi
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