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BDX61

Description
Bipolar Transistors;NPN;20A;60V;TO-3
CategoryDiscrete semiconductor   
File Size202KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

BDX61 Overview

Bipolar Transistors;NPN;20A;60V;TO-3

isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V (Min)
·High
Current Capability
·Wide
area of safe operation
·100%
avalanche tested
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for high power audio, disk head positioners
and other linear applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VALUE
80
60
7
20
30
5
150
150
-65~150
UNIT
V
V
V
A
A
A
W
BDX61
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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