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BDY56

Description
Bipolar Transistors;NPN;15A;120V;TO-3
CategoryDiscrete semiconductor   
File Size208KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BDY56 Overview

Bipolar Transistors;NPN;15A;120V;TO-3

BDY56 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknow
isc
Silicon NPN Power Transistor
BDY56
DESCRIPTION
·Excellent
Safe Operating Area
·DC
Current Gain-
: h
FE
=20-70@I
C
= 4A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 1.1 V(Max)@ I
C
= 4A
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
150
120
7
15
7
117
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.5
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
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