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BDY61

Description
Bipolar Transistors;NPN;10A;60V;TO-3
CategoryDiscrete semiconductor   
File Size201KB,2 Pages
ManufacturerInchange Semiconductor
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BDY61 Overview

Bipolar Transistors;NPN;10A;60V;TO-3

isc
Silicon NPN Power Transistor
BDY61
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V (Min)
·Low
Collector-Emitter Saturation Voltage
·Excellent
Safe Operating Area
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
100
60
7
5
8
3
50
150
-65~150
UNIT
V
V
V
A
A
A
W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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