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BDY93

Description
Bipolar Transistors;NPN;6A;350V;TO-3
CategoryDiscrete semiconductor   
File Size203KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

BDY93 Overview

Bipolar Transistors;NPN;6A;350V;TO-3

isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 350V(Min)
·High
Switching Speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation @T
C
=75℃
Junction Temperature
Storage Temperature
VALUE
750
350
6
4
6
2
3
30
150
-65~150
UNIT
V
V
V
A
A
A
A
W
BDY93
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.65
UNIT
℃/W
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www.iscsemi.com
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