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BT131

Description
Triacs;1A;500V;TO-92
Categoryaccessories   
File Size169KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

BT131 Overview

Triacs;1A;500V;TO-92

isc Triacs
BT131
FEATURES
·Glass
passivated,sensitive gate triacs in a plastic envelope
·Intended
for use in general purpose bidirectional switching and phase control applications.
·These
devices are intended to be interfaced directly to microcontrollers,logic intergrated circuits and
other low power
gate trigger circuit.
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
MIN
UNIT
V
DRM
V
RRM
I
T(RMS)
I
TSM
P
GM
P
G(AV)
T
j
T
stg
Repetitive peak off-state voltage
Repetitive peak off-state voltage
RMS on-state current (full sine wave)
T
lead
51℃
Non-repetitive peak on-state current
Peak gate power dissipation
Average gate power dissipation
Operating junction temperature
Storage temperature
600
600
1
10
5
0.5
110
-40~150
V
V
A
A
W
W
ELECTRICAL CHARACTERISTICS (T
C
=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
DRM
V
RRM
I
D
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Off-state leakage current
I
D
=0.1mA
I
D
=0.5mA
V
D
= V
DRM(max),
T
j
= 125℃
600
600
0.5
3
V
V
mA
I
GT
Gate trigger current
V
D
=12V; I
T
= 0.1A
3
3
7
mA
V
TM
I
H
V
GT
On-state voltage
Holding current
Gate trigger voltage
I
T
=2.0A
I
GT
=0.1A ,V
D
= 12V
V
D
=12V ; R
L
=100Ωall quadrant
1.7
5
1.5
V
mA
V
isc website:
www.iscsemi.com
isc
&
iscsemi
is registered trademark

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