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BYT08P-1000

Description
Fast Recovery Diode Rectifiers;8A;1000V;TO-220-2
CategoryDiscrete semiconductor   
File Size240KB,2 Pages
ManufacturerInchange Semiconductor
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BYT08P-1000 Overview

Fast Recovery Diode Rectifiers;8A;1000V;TO-220-2

Ultra fast Rectifier
BYT08P-1000
FEATURES
·With
TO-220 packaging
·Metal
silicon junction, majority carrier conduction
·Low
power loss, high efficiency
·Guardring
for over voltage protection
·High
surge capability
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching
power supply
·High
frequency inverters
·Reverse
battery protection
·Polarity
protection applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FRM
I
FSM
Tj
T
stg
PARAMETER
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current @Tc=115℃
Repetitive Peak Forward Current@Tc=115℃
Nonrepetitive Peak Surge Current
10 ms single half sine-wave superimposed on
rated load conditions;One shot(50Hz)
Junction Temperature
Storage Temperature Range
VALUE
UNI
T
1000
V
8
16
100
-40~150
-40~150
A
A
A
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
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